随着半导体技术的发展，芯片集成度越来越高，硅器件尺寸已逼近物理极限。同时，高集成度带来了新的问题，即微纳米器件在辐射环境下工作的长期可靠性，这些问题导致器件发展面临巨大的挑战。目前，随着航天事业的崛起，新型半导体材料广泛应用于卫星、空间站等航天领域。宇宙射线中的高能重离子，会引起宇航器件单粒子效应，还会在器件材料内部产生永久性的结构损伤，从而影响器件稳定性。因此，InP和GaN等III-V族半导体材料及器件快重离子辐照效应的研究对宇航器件的应用及抗辐射加固具有指导意义。 本论文利用兰州重离子加速器提供的多种快重离子(Ar、Fe、Kr、Xe、Ta和Bi)辐照III-V族半导体InP及GaN晶体。辐照实验在真空和室温条件下进行，实验中通过增加不同厚度的降能片，改变入射离子的能量从而调节入射离子在材料中的电子能损，满足实验设计的需求。我们采用透射电子显微镜(TEM)和拉曼光谱(Raman)对辐照前后的样品进行表征，系统研究了快重离子辐照在两种材料中产生的缺陷及潜径迹的形貌和尺寸。采用Xe、Ta和Bi离子在真空条件下静态辐照AlGaN／GaN HEMT器件。利用半导体参数测试仪对辐照前后的器件进行电学参数测试，研究重离子辐照对器件电学性能的影响。利用聚焦离子束系统制备器件剖面样品，然后利用TEM观测器件不同区域潜径迹的形貌和尺寸，通过研究辐照产生的缺陷和潜径迹，探索器件结构损伤的根本原因。 快重离子辐照引起InP晶体结构损伤。(a)Fe、Ar、Kr和Xe四种离子辐照后，拉曼谱中LO’模式被激发，根据InF晶体的能带结构判定LO’模式属于X点声子散射引起的二级拉曼散射，参与一级拉曼散射的声子不再局限于г点而是扩展到整个布里渊区，说明辐照引起晶体无序化，晶格畸变导致拉曼声子模式被修正。LO’模式与LO模式的强度比I〓／I〓存在峰值且随辐照参数变化。辐照注量逐渐增大时晶体的无序化程度逐渐增大，I〓／I〓增大；随辐照注量不断升高，出现退火效应，I〓／I〓减小。(b)Bi离子辐照实验中发现TO模式受激发，I〓／I〓随着辐照注量的增大逐渐增大。TO模式受激发说明辐照引起晶体结晶度的改变， TEM实验结果验证了这一结论。因此，I〓／I〓比值能够定量描述晶体的结晶度。 (c)Ta离子和Bi离子辐照在InP晶体中产生了潜径迹。随着电子能损不断增大，潜径迹的尺寸逐渐增大，连续性增强。电子能损的波动性以及Rayleigh不稳定性导致非连续径迹的形成。TEM和拉曼实验结果直接和间接的表明辐照导致InP晶体结构损伤。 利用不同能量的Ar、Xe和Ta离子辐照GaN晶体，拉曼光谱的变化不明显。 Fe离子辐照后在较高的注量下，不同频率的拉曼散射模式被激发，相关研究表明新模式的激发是由Ga原子或N原子相关缺陷态的作用引起的。此外，不同能量的Bi离子辐照后，晶体中产生压应力随辐照注量的增大逐渐增大，导致E₂(high)模式蓝移。拉曼实验结果表明在高电子能损、高注量等极端条件下，快重离子辐照同样会引起GaN材料晶体结构损伤。Xe、Ta和Bi离子在辐照后GaN晶体中发现了大小不同的潜径迹，潜径迹半径随电子能损的增大而增大。实验结果及理论分析得出结论，GaN晶体中潜径迹形成的电子能损阈值约为23 keV／nm。 快重离子辐照引起AlGaN／GaN高电子迁移率晶体管(HEMT)电学参数退化，器件材料结构损伤。测量转移特性曲线发现辐照后器件阈值电压正向漂移，饱和漏电流减小。输出特性曲线比较分析发现辐照后饱和漏电流大幅度降低，并且在高注量下器件性能失效，晶体管不导通，无外加偏压下有漏电现象。采用TCAD软件模拟离子辐照引起器件中电场分布的变化，发现离子入射3 ns后电场分布恢复到初始状态，说明辐照后器件电学参数的退化与电场分布的变化没有关系。我们利用聚焦离子束制备器件的剖面样品，在TEM下观察到异质结及缓冲层区域形成了潜径迹，径迹形貌和尺寸随入射深度变化而变化。通过实验和仿真结果综合分析得出结论，重离子辐照在器件材料中沿离子路径形成潜径迹，晶格结构被破坏，导致二维电子气(2DEG)面密度减小，迁移率下降，引起AlGaN／GaN HEMT器件阈值电压正向漂移，饱和漏电流急剧减小，最终导致器件电学性能退化，在这一过程中潜径迹起到至关重要的作用。 关键词：磷化铟，氮化镓，快重离子，辐照损伤，潜径迹，电学性能

 With the development of semiconductor technology, the integration is more and more high, the size of silicon devices is approaching the physical limit. At the same time, the high integration brings new problems. The long-term reliability of micro-nano devices working in radiation environment, these problems cause the development of devices face great challenges. At present, with the rise of space industry, new semiconductor materials are widely used in satellites, space stations and other aerospace fields. High-energy heavy ions in cosmic rays can cause a single event effect on aerospace devices, as well as permanent structural damage inside the device material, which can affect the stability of the device. Therefore, it is very important to study the swift heavy ion irradiation effect on III-V semiconductor materials and devices such as InP and GaN. Irradiation experiments were performed at Heavy Ion Research Facility in Lanzhou (HIRFL), in which the InP and GaN crystals were irradiated by Ar, Fe, Kr, Xe, Ta and Bi ions with different initial kinetic energies. The irradiation experiment was carried out under the condition of vacuum and room temperature. Aluminum foils with different thicknesses were placed in front of the samples in order to adjust the energy of SHIs, and satisfy the needs of electronic energy loss (dE/dx)〓. The transmission electron microscopy (TEM) and Raman spectroscopy were used to test the samples before and after irradiation, to systematically studied the defects as well as the morphology and size of the latent tracks. The AlGaN/GaN HEMT devices were irradiated by Xe, Ta and Bi ions under the condition of vacuum. The devices were in off-sate without bias during the irradiation process. The electrical parameters of the pristine and irradiated AlGaN/GaN HEMT devices were measured by semiconductor parameter analyzer and then a cross section TEM was used to investigate the structural damage of the devices. The cross sectional slices of the devices selected for TEM measurement were prepared by focus ion beam system (FIB). The structure of InP crystals were damaged after irradiated with swift heavy ions. The new mode LO’ was excited caused by Fe, Ar, Kr and Xe ions. According to the band structure of InP, the Raman scattering are not limited to those at the Γ point but extended to the whole Brillouin zone. Which indicates that defects and disorders in the crystal result in the modification of lattice vibrational modes of phonons. A peak point of the intensity ratio of LO’ peak to LO peak (I〓/I〓) was detected, and the corresponding fluence decreased with the increase in (dE/dx)〓. While in the case of Bi ions irradiation with a higher (dE/dx)〓, the intensity of TO mode rapid increased with the increase in ion fluences. The excitation of TO mode indicates that the crystal crystallinity changes caused by irradiation, and the results of TEM test verify this point. Therefore, the ratio of I〓/I〓 can quantitatively describe the crystal crystallinity. Moreover, the latent tracks were observed in InP crystals and the radius of latent tracks increased with the increase in (dE/dx)〓. The fluctuation of (dE/dx)〓 and Rayleigh instability lead to the formation of discontinuous tracks. The experiment results obtained by TEM and Raman directly and indirectly indicate that the structure of InP crystal were damaged. The GaN crystals were irradiated by different swift heavy ions with different energies. There was no significant change in Raman spectra of GaN crystals after irradiated by Ar, Xe, and Ta ions. While after irradiated by Fe ion, the new modes were excited in Raman spectra induced by defects state related to Ga atom and N atom. In addition, the compressive stresses increased gradually with the increase in ion fluences caused by Bi ion, which lead to the blue shift of E₂(high) mode. Raman results show that swift heavy ion irradiation will also cause the crystal structure damage in GaN material under the extreme conditions such as high (dE/dx)〓 and fluences. The latent tracks were detected in GaN after irradiated by Xe, Ta and Bi ions. The radius of latent tracks increased with the increase in (dE/dx)〓. According to the experiment results reported in the literature and in this work, we conclude that the threshold of (dE/dx)〓 for the track formation was about 23 keV/nm in GaN bulk material. AlGaN/GaN high electron mobility transistors (HEMTs) devices were irradiated by swift heavy ions with different fluences. From structural and electrical studies it was found that SHI irradiation leads to the significant deterioration of structural and electrical properties of the devices. After irradiation, an increase of V〓 were detected in the transfer characteristic curves and a sharp decrease of I〓 were observed in output characteristic curves. The device almost failed after irradiated with Ta ions at the high fluences. Moreover, the reverse leakage current was detected in the devices irradiated by Bi ions. TCAD software were used to simulate the change of electric field distribution in the device caused by ion irradiation, it was found that the distribution of electric field restored to its initial state after 3 ns, which indicates that the degradation of electrical parameters of the devices is not related to the disturbance of electric field. In addition, the latent tracks were observed for the first time visually at the heterogeneous junction and buffer layer area in the devices after irradiation with Bi and Ta ions. The morphology and size of the latent tracks in different regions of the device were analyzed in detail. Further analyses indicate that the latent tracks induced by SHI irradiation were responsible for the degradation of the devices, which resulted in the decreased carrier mobility and sheet carrier density of 2DEG. Thus: we propose that the latent tracks play an essential role in degradation of HEMT devices. Key Words: InP, GaN, swift heavy ions, irradiation damage, latent tracks, electrical characteristics